Datasheet Summary
FCU900N60Z 600V N-Channel MOSFET
August 2012
600V N-Channel MOSFET
Features
- 675V @TJ = 150oC
- Max. RDS(on) = 900mΩ
- Ultra Low Gate Charge (Typ. Qg = 13nC)
- Low Effective Output Capacitance (Typ. Coss.eff = 49pF)
- 100% Avalanche Tested
- ESD Improved Capacity
SuperFET® II
Description
SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy....
